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       Data Sheet www.rohm.com ? 2012 ROHM Co., Ltd. All rights reserved. Fast Recovery Diode RF201L2S ?Applications ?Dimensions (Unit : mm) General rectification ?Features 1)Small power mold type. (PMDS) 2)Ultra low VF 3)Ultra high switching speed 4)Low switching loss ?Construction Silicon epitaxial planer ?Structure ?Taping dimensions (Unit : mm) ?Absolute maximum ratings (Ta=25°C) Parameter LimitsSymbol Unit Reverse voltage (repetitive) 200VRM V Reverse voltage (DC) 200VR V Io A2 IFSM A Junction temperature 150Tj °C Tstg °C?55 to ?150 ?Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Conditions Forward voltage VF - 0.815 0.87 V IF=2.0A IR - 0.01 10 μAVR=200V Reverse recovery time trr - 14 25 ns IF=0.5A,IR=1A,Irr=0.25*IR Forward current surge peak (60Hz?1cyc) 20 Average rectified forward current (*1) Reverse current ?Land size figure (Unit : mm) Storage temperature (*1)Mounted on epoxy board. Tc=95 ?C max. Parameter PMDS 2.0 4.2 2.0 ROHM : PMDS JEDEC : SOD-106 ① Manufacture date ② ① ② 67 6 0.1±0.02 0.1 2.6±0.2 2.0±0.2 5.0±0.3 1.2±0.3 4.5±0.2 1.5±0.2 Ⅱ㈥㈧ɑ㈧㈥㈨ ㈩㈥Ⅶɑ㈧㈥㈨ Ⅱ㈥㈧ɑ㈧㈥㈨ ㈩㈥㈧ɑ㈧㈥㈧Ⅲ 倍㈨㈥ⅢⅢɑ㈧㈥㈧Ⅲ Ⅲ㈥Ⅲɑ㈧㈥㈧Ⅲ ㈨㈥ⅤⅢɑ㈧㈥ ㈨ ㈨㈩ɑ㈧㈥ ㈩ 倍㈨㈥ⅢⅢ Ⅶ㈥Ⅲɑ㈧㈥ ㈨ ㈧㈥Ⅰ Ⅲ㈥ Ⅰ ㈩㈥Ⅵ／ ＃： ㈢㈧㈥㈨② ㈤㈧㈥㈧ 1/3 2013.08 Rev.C |